| 摘要 |
PROBLEM TO BE SOLVED: To provide an easy-to-manufacture substrate pedestal which can prevent degradation in the insulating film, in a semiconductor device on a substrate. SOLUTION: The substrate pedestal 12 of a plasma processing device 10 has a lower electrode 20, which is connected to a first high-frequency power supply 28 and a second high-frequency power supply 29; a dielectric layer 21 which is embedded in the central part of the upper surface of the lower electrode 20; an electrostatic chuck 22 to be mounted on the dielectric layer 21; and a conductive film 45 arranged between a wafer W and the dielectric layer 21. The electrostatic chuck 22 has an electrode film 37, the conductive film 45 satisfies the conditions: "δ<SB>1</SB>/z<SB>1</SB>≥85" and "ρ<SB>s1</SB>≤2.67×10<SP>5</SP>Ω/sq.", and the electrode film 37 satisfies the condition "δ<SB>2</SB>/z<SB>2</SB>≥85", where z<SB>1</SB>is the thickness of the conductive film 45,δ<SB>1</SB>is the skin depth of the conductive film 45,ρ<SB>S1</SB>is the surface resistivity of the conductive film 45, z<SB>2</SB>is the thickness of the conductive film 37, andδ<SB>2</SB>is the skin depth of the conductive film 37. COPYRIGHT: (C)2010,JPO&INPIT |
