| 摘要 |
Provided is a method for manufacturing a semiconductor element, wherein an electrode having excellent ohmic characteristics can be formed and a semiconductor element having excellent element characteristics can be obtained with excellent yield. A semiconductor element and a semiconductor device are also provided. The method is at least provided, in the following order, with a semiconductor element structure forming step wherein a semiconductor element structure (3) is formed on the main surface (2a) side of a first conductivity type silicon carbide bulk substrate (2) having the main surface (2a) and the rear surface (2b), and an ohmic electrode forming step wherein an ohmic electrode (4) in ohmic contact with the silicon carbide bulk substrate (2) is formed on the rear surface (2b) side of the silicon carbide bulk substrate (2). The ohmic electrode forming step is provided, in the follwoing order, with a small step wherein the thickness of the silicon carbide bulk substrate (2) is reduced by grinding the rear surface (2b) side of the silicon carbide bulk substrate (2), then, the ohmic electrode (4) is formed on the rear surface (2b), and a small step wherein heat treatment is performed to the ohmic electrode (4) by employing an optical heating method wherein the ohmic electrode is irradiated with high power light from the rear surface (2b) side of the silicon carbide bulk substrate (2). |
