发明名称 SURFACE ACOUSTIC WAVE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To suppress occurrence of spurious while suppressing variation in piezoelectric substrate size under temperature change regarding a surface acoustic wave device obtained by depositing a piezoelectric substrate and a support substrate. <P>SOLUTION: A surface acoustic wave device comprises: an LT substrate 10 capable of propagation acoustic waves; interdigital electrodes 16, 17 provided on a surface of the LT substrate and being capable of exciting surface acoustic waves; a silicon substrate 12 which is deposited with the LT substrate, has a rear surface which is coarser than that of a piezoelectric substrate and has such coarseness as to scatter bulk waves propagated from the LT substrate, and whose thermal expansion coefficient is smaller than that of the LT substrate; and an organic adhesive layer 14 for adhering the LT substrate 10 and the silicon substrate 12. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010161697(A) 申请公布日期 2010.07.22
申请号 JP20090003371 申请日期 2009.01.09
申请人 NGK INSULATORS LTD 发明人 SUZUKI KENJI
分类号 H03H9/25;H01L41/09;H01L41/18;H01L41/22;H01L41/313;H01L41/39;H03H9/145 主分类号 H03H9/25
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