| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an SOI wafer, capable of flattening a silicon thin film of a laminated wafer obtained by an ion implantation peeling method with high film thickness uniformity. SOLUTION: The method of manufacturing a laminated wafer with silicon thin film includes: forming an ion implantation layer by ion-implanting at least one gas ion of hydrogen ion and rare gas ion from a surface of a bond wafer; sticking the ion-implanted surface of the bond wafer with a surface of a base wafer directly or through an insulating film; peeling the bond wafer in the ion implantation layer, thereby forming a laminated wafer with silicon thin film having a recessed film thickness distribution in which the thickness is larger in the periphery of the wafer than in the center thereof; and performing flattening thermal treatment to the laminated wafer in an atmosphere including hydrogen or hydrogen chloride. COPYRIGHT: (C)2010,JPO&INPIT
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