| 摘要 |
<p>A resistive particle sensor (1) comprises an electrode system (2) with two electrodes (3,4), and a semiconducting material (5), where the semiconducting material is contacted with the electrodes. The semiconducting material is selected from a group consisting of rare-rare-earth mixed oxides, rare earth-zirconium mixed oxides, alkaline earth metal-zirconium mixed oxides, transition metal-zirconium mixed oxides, rare earth-aluminum mixed oxides, alkaline earth metal-aluminum mixed oxides or transition metal-aluminum mixed oxides. A resistive particle sensor comprises an electrode system with two electrodes, and a semiconducting material, where the semiconducting material is contacted with the electrodes. The semiconducting material is selected from a group consisting of rare-rare-earth mixed oxides, rare earth-zirconium mixed oxides, alkaline earth metal-zirconium mixed oxides, transition metal-zirconium mixed oxides, rare earth-aluminum mixed oxides, alkaline earth metal-aluminum mixed oxides, transition metal-aluminum mixed oxides, rare earth-titanium mixed oxides, barium-titanium mixed oxides, transition metal-titanium mixed oxides, rare earth indium mixed oxides, alkaline earth metal indium mixed oxides, transition metal-indium mixed oxides, rare earth-zinc mixed oxides, alkaline earth-zinc mixed oxides, transition metal-oxide-mixed oxide, samarium, yttrium oxide, terbium oxide or their mixtures. An independent claim is also included for a method for producing resistive particle sensor, which includes creating oxidizing agent and/or reducing agent-free atmosphere.</p> |
