| 摘要 |
<p>A non-volatile semiconductor memory determines that an arbitrary cell in an array has a predetermined threshold voltage, by comparing with a reference current using a sense amplifier circuit. In the non-volatile semiconductor memory, a reference current generation circuit (10) is provided with a current adjuster (11) for adjusting the reference current. A current adjustment amount calculator (12) receives address information of a target memory cell, the threshold voltage of which is to be determined, and calculates a current adjustment amount corresponding to the address information. The current adjuster (11) adjusts the reference current on the basis of the calculated current adjustment amount. Accordingly, even if the sense amplifier circuit, the target memory cell, and the wiring connected to the sense amplifier have characteristic variations, the shift amount (offset amount) between actual and apparent threshold values is compensated, so that an electrical stress applied to the memory cell during a write period is reduced and therefore write endurance and data hold characteristics are improved.</p> |
