METHOD FOR FABRICATING NONVOLATILE MEMORY DEVICES

摘要

PURPOSE: A method for manufacturing a nonvolatile memory device is provided to uniformly form a sidewall profile of a stack structure by using materials with impurity content difference as first and second material films. CONSTITUTION: A first material film(110) and a second material film(120) are alternately laminated on a semiconductor substrate(100). Trenches passing through the first and second material films are formed by performing a first etching process. The second material films exposed to the trench are removed by performing a second etching process. The first and second material layers are made of the material with impurity content difference.