| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a two-terminal semiconductor device using abrupt metal-insulator transition semiconductor material, and to provide a method of manufacturing the same. <P>SOLUTION: The two-terminal semiconductor device includes a first electrode layer, an abrupt metal-insulator transition (MIT) semiconductor material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor material layer. Consequently, an abrupt MIT by hole doping which is different from the structural phase transition is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
