发明名称 ETCHING DEVICE, ETCHING METHOD, ETCHING PROGRAM, AND FILM FORMING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide: an etching device capable of satisfactory processing an object into any shape; an etching method; and an etching program. SOLUTION: The etching device 80 includes: an ion gun 11; an XY-stage 12; a control part 13; a PC 15; and a measuring device 81. The measuring device 81 measures thickness in a predetermined measuring point on a substrate 31. Based on a distribution of etching grade of the ion gun 11 and a distribution of etched amount of the substrate 31, an intermediate target thickness of the thickness of the substrate 31 in the measuring point is preliminarily set based on the position of etching center. When the thickness in the measuring point is within an allowable range from the intermediate target thickness in etching in each area, the XY-stage 12 is driven, and etching is terminated. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010161124(A) 申请公布日期 2010.07.22
申请号 JP20090001152 申请日期 2009.01.06
申请人 SHOWA SHINKU:KK 发明人 SHIONO TADAHISA
分类号 H01L21/3065;C23C14/54;C23C16/52;H01L21/205;H01L21/31;H01L21/461 主分类号 H01L21/3065
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