| 摘要 |
Provided is a semiconductor device about which the reliability thereof is certainly kept even when a void is generated in a buried film in its trench. A rectangular element formation region is formed in a silicon layer. A trench having a predetermined width is formed to surround the element formation region. A first TEOS film and a second TEOS film are buried in the trench. A protecting film is formed at an L-shaped intersection region of the trench.
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