SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCER DEVICE

摘要

Etch block layers having an etching rate smaller than that of a first semiconductor forming a semiconductor substrate are formed on the sidewalls of device isolation grooves by applying oblique ion implantation of Ox, N, or C to the semiconductor substrate including the first semiconductor. Embedded layers including a second semiconductor are selectively formed in recesses by epitaxial-growing the second semiconductor having a lattice constant larger than that of the first semiconductor in the recesses.