发明名称 |
MEMRISTOR WITH NANOSTRUCTURE ELECTRODES |
摘要 |
<p>A memristor having an active region includes a first electrode. The first electrode comprises a nanostructure formed of at least one metallic single walled nanotube. The memristor also includes a second electrode formed of at least one metallic single walled nanotube. The second electrode is positioned in a crossed relationship with respect to the first electrode. The memristor further includes a switching material positioned between the first electrode and the second electrode, in which the active region is configured to form in the switching material at a cross point of the first electrode and the second electrode.</p> |
申请公布号 |
WO2010082929(A1) |
申请公布日期 |
2010.07.22 |
申请号 |
WO2009US31144 |
申请日期 |
2009.01.15 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P;XIA, QIANGFEI;TANG, JING |
发明人 |
XIA, QIANGFEI;TANG, JING |
分类号 |
H01L21/8239;H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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