| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can reduce contact resistance as compared with a conventional one by forming an interface containing heavily-doped germanium, and to provide a semiconductor device. Ž<P>SOLUTION: An interlayer dielectric 7 is formed on a silicon substrate 1 with a p-type diffusion layer 5 formed thereon. Then, a contact hole 10 reaching a part, where the p-type diffusion layer 5 of the silicon substrate 1 is formed, is formed on the interlayer dielectric 7. A cluster ion beam 20 containing boron and germanium is radiated onto the silicon substrate 1 at a bottom part of the contact hole 10, and a silicon layer 11 containing the boron and germanium is formed in the silicon substrate 1. Then, the cluster ion beam 20 containing boron and germanium is radiated to form a layer 12 containing the boron and germanium above a surface of the silicon substrate 1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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