发明名称 |
ESTABLISHING A UNIFORMLY THIN DIELECTRIC LAYER ON GRAPHENE IN A SEMICONDUCTOR DEVICE WITHOUT AFFECTING THE PROPERTIES OF GRAPHENE |
摘要 |
A method and semiconductor device for forming a uniformly thin dielectric layer on graphene. A metal or semiconductor layer is deposited on graphene which is located on the surface of a dielectric layer or on the surface of a substrate. The metal or semiconductor layer may act as a nucleation layer for graphene. The metal or semiconductor layer may be subjected to an oxidation process. A thin dielectric layer may then be formed on the graphene layer after the metal or semiconductor layer is oxidized. As a result of synthesizing a metal-oxide layer on graphene, which acts as a nucleation layer for the gate dielectric and buffer to graphene, a uniformly thin dielectric layer may be established on graphene without affecting the underlying characteristics of graphene.
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申请公布号 |
US2010181655(A1) |
申请公布日期 |
2010.07.22 |
申请号 |
US20090357526 |
申请日期 |
2009.01.22 |
申请人 |
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM;TEXAS INSTRUMENTS, INC. |
发明人 |
COLOMBO LUIGI;BANERJEE SANJAY;KIM SEYOUNG;TUTUC EMANUEL |
分类号 |
H01L29/00;H01L21/18 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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地址 |
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