| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce an etching damage by a photoelectric conversion part to improve an offset control accuracy in a protection region of the photoelectric conversion part. <P>SOLUTION: A method for manufacturing the photoelectric conversion device includes: a first step of forming a gate electrode 21 of a transfer transistor in a pixel array region; a second step of implanting ions with a gate electrode 21 of the transfer transistor as a mask to form a first conductivity type semiconductor region; a third step of forming an insulating film 30i so as to cover the gate electrode 21 of the transfer transistor; and a fourth step of forming a protection region 14 of a second conductivity type, which is the opposite conductivity type, by implanting ions using the gate electrode 21 of the transfer transistor and a portion covering a side face of the gate electrode 21 of the transfer transistor of the insulating film 30i as a mask in a state in which the gate electrode 21 of the transfer transistor is covered by the insulating film 30i, and causing a portion of the semiconductor region from which the protection region 14 is removed to be the charge accumulation region of the first conductivity type. <P>COPYRIGHT: (C)2010,JPO&INPIT |
