| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element having excellent piezoelectric characteristics achieved by regulating surface roughness of a bottom electrode or a piezoelectric layer within a predetermined range. <P>SOLUTION: The piezoelectric thin film element includes bottom electrodes 2, 3, a piezoelectric layer 4, and a top electrode on a substrate 1. The piezoelectric layer 4 includes as a main phase a perovskite-type oxide represented by (Na<SB>x</SB>K<SB>y</SB>Li<SB>z</SB>)NbO<SB>3</SB>(0≤x≤1, 0≤y≤1, 0≤z≤0.2, x+y+z=1). The substrate 1 is a Si substrate. The bottom electrode 3 includes a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms. <P>COPYRIGHT: (C)2010,JPO&INPIT |
