| 摘要 |
PROBLEM TO BE SOLVED: To provide a tantalum sputtering target which provides good film uniformity and can improve the quality of a sputtered film, and to provide a method for production of the target. SOLUTION: The production method for the tantalum sputtering target includes forging and recrystallization-annealing a tantalum ingot or a billet obtained by melting and casting, and rolling it to form a crystal structure in which an orientation (222) is preferential toward the central plane of the target from the position of 10% of a target thickness. There is also provided the tantalum sputtering target having the crystal structure in which the orientation (222) is preferential toward the central plane of the target from the position of 10% of the target thickness. COPYRIGHT: (C)2010,JPO&INPIT
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