发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 A semiconductor integrated circuit device achieving an active state in which a high speed operation is performed and an inactive state in which a low leakage state is retained while an internal logical state is retained, and a transition between the two states can be achieved at high speed with low noise and low power. A power control circuit provided between a first power-supply line for providing a first external power-supply voltage and a second power-supply line for providing a second external power-supply voltage includes an output MOSFET. A constant OFF current flows in the MOSFET even if a gate and a source of the output MOSFET are put in the same voltage, and a threshold voltage of the output MOSFET is smaller than that of an internal circuit MOSFET.
申请公布号 US2010182076(A1) 申请公布日期 2010.07.22
申请号 US20100688967 申请日期 2010.01.18
申请人 RENESAS TECHNOLOGY CORP. 发明人 MIZUNO HIROYUKI;ITOH KIYOO;YAMAOKA MASANAO
分类号 G05F1/10 主分类号 G05F1/10
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