Processing method of pad aluminum of semiconductor device

摘要

PURPOSE: A pad aluminum structure of a semiconductor device and a processing method thereof are provided to restrain oxidation by removing C and F from a pad aluminum and forming simultaneously an oxide layer on the pad aluminum using predetermined cleaning solution. CONSTITUTION: A pad aluminum(4) , an insulating layer(8) and a protection layer(10) are sequentially formed on a silicon substrate(2). The pad aluminum is partially exposed by forming an etching hole(16) through the protection layer and the insulating layer. C and F radical polymers are removed from the exposed pad aluminum by using a cleaning solution. An oxide layer(12) is formed on the exposed pad aluminum by performing a spin-dry using high temperature Ne gas. The cleaning solution contains ammonium fluoride of 40 to 60 %, N,N-dimethyl acetamide of 20 to 30 % and dipropylene glycol monopropyl ether.