发明名称 Epitaxial Structure Having Low Defect Density
摘要 An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of first recesses corresponding in position to the concentrated defect groups, the sizes of the first recesses being close to each other; and a plurality of defect-termination blocks respectively and filling the first recesses and having polished surfaces. The defect-termination blocks are made of a material which is different in removal rate from that of the first epitaxial layer. The polished surfaces are substantially flush with the epitaxial surface so that the first epitaxial layer has a substantially planarized crystal growth surface
申请公布号 US2010181576(A1) 申请公布日期 2010.07.22
申请号 US20100688005 申请日期 2010.01.15
申请人 WUU DONG-SING;HORNG RAY-HUA;CHEN SHIH-TING;TSAI TSHUNG-HAN;WU HSUEH-WEI 发明人 WUU DONG-SING;HORNG RAY-HUA;CHEN SHIH-TING;TSAI TSHUNG-HAN;WU HSUEH-WEI
分类号 H01L29/20 主分类号 H01L29/20
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