发明名称 ENHANCED LOW ENERGY ION BEAM TRANSPORT IN ION IMPLANTATION
摘要 An ion implantation method and system that incorporate beam neutralization to mitigate beam blowup, which can be particularly problematic in low-energy, high-current ion beams. The beam neutralization component can be located in the system where blowup is likely to occur. The neutralization component includes a varying energizing field generating component that generates plasma that neutralizes the ion beam and thereby mitigates beam blowup. The energizing field is generated with varying frequency and/or field strength in order to maintain the neutralizing plasma while mitigating the creation of plasma sheaths that reduce the effects of the neutralizing plasma.
申请公布号 US2010181499(A1) 申请公布日期 2010.07.22
申请号 US20090357973 申请日期 2009.01.22
申请人 AXCELIS TECHNOLOGIES, INC. 发明人 VANDERBERG BO H.;DIVERGILIO WILLIAM F.
分类号 A61N5/00;H01J27/00;H01J49/00 主分类号 A61N5/00
代理机构 代理人
主权项
地址