| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for forming a pattern with high sensitivity and wide exposure latitude in an ultrafine region, while suppressing changes in the resist performance due to an acid generated during resist storage, with respect to an actinic ray-sensitive or radiation-sensitive resin composition, particularly, a resist composition for electron beam, X-ray or EUV lithography. <P>SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition contains a resin (P), having a repeating unit (A), which decomposes upon irradiation with actinic rays or radiation and generates an acid and a repeating unit (B), having a structure which decomposes under the action of an acid and exhibits increased solubility in an aqueous alkali solution, and a basic compound (Q), wherein when the basic compound (Q) is held at 120°C for 15 min, a volatilized amount is ≥10 mass%. <P>COPYRIGHT: (C)2010,JPO&INPIT |
