发明名称 REFERENCE VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a reference voltage generation circuit capable of generating an appropriate reference voltage without enlarging the circuit area. Ž<P>SOLUTION: The reference voltage generation circuit 1 includes a first node V<SB>BL</SB>, a second node B, a first transistor (first switch) 15, a second transistor (second switch) 16, a plurality of capacitors 10 to 13, a switch controller 18, and a voltage controller 19. Provided that a voltage of the second node B is optionally settable at either 0V or Vint by the voltage controller 19, the voltage V<SB>BL</SB>of a reference bit line 5 is settable in voltage ranges of 31 kinds totaling low voltage range like Fig.2 and high voltage range like Fig.3 without enlarging the circuit area, and an optimum voltage of the reference bit line 5 is settable according to property of a memory cell 3. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010160851(A) 申请公布日期 2010.07.22
申请号 JP20090002623 申请日期 2009.01.08
申请人 TOSHIBA CORP 发明人 SHIGA HIDEHIRO;TAKASHIMA DAIZABURO
分类号 G11C11/22 主分类号 G11C11/22
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