发明名称 METHOD OF OPERATING TRANSISTORS AND STRUCTURES THEREOF FOR IMPROVED RELIABILITY AND LIFETIME
摘要 Embodiments of the present invention provide a semiconductor device that includes a transistor device having a first, a second, and a third node; and an interconnect structure having at least one wire and the wire having a first and a second end with the first end of the wire being connected to one of the first, the second, and the third node of the transistor device. The wire is conductive and adapted to provide an operating current in a first direction during a normal operating mode, and adapted to provide a repairing current in a second direction opposite to the first direction during a repair mode of the semiconductor device. In one embodiment the transistor device is a bipolar transistor with the first, second, and third nodes being an emitter, a base, and a collector of the bipolar transistor. The wire is connected to one of the emitter and the collector. Method of operating the semiconductor device and current supplying circuit for the semiconductor device are also disclosed.
申请公布号 US2010182729(A1) 申请公布日期 2010.07.22
申请号 US20090355815 申请日期 2009.01.19
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 WANG PING-CHUAN;YANG ZHIJIAN;GUARIN FERNANDO J.;HOSTETTER J. EDWIN;FENG KAI D.
分类号 H02H11/00;H01L23/48;H01L29/73 主分类号 H02H11/00
代理机构 代理人
主权项
地址