发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A micro-bolometer type infrared (IR) sensing device is provided. The IR sensing device includes an absorbed heat discharging part; a sensing structure part formed as bean structure, spaced apart from the absorbed heat discharging part, supported at least at one end on the absorbed heat discharging part, and discharging heat absorbed in the sensing structure part by being elastically deformed and thus touching the absorbed heat discharging part. The sensing structure part includes: a sensing part with variation in secondary attribute (for example, in electrical resistance property) according to heat; and a light-absorbing part formed into one unit with the sensing part in a manner to surround the sensing part as seen in section view, and converting energy of incident photons into heat. The sensing structure part discharges heat absorbed therein by being elastically deformed and thus touching the absorbed heat discharge part spaced apart downward from the sensing structure part. According to an aspect of the present invention, the sensing structure part has a meander structure which is meandered while advancing and returning and showing a shape ‘⊂’ or a shape ‘⊃’ in turns at curved portions, as seen from above, near at least one end where the sensing structure part is supported, wherein the meander structure is based on a serpentine structure which is narrow in width and curved in form.
申请公布号 US2010181486(A1) 申请公布日期 2010.07.22
申请号 US20090355131 申请日期 2009.01.16
申请人 HANVISION CO., LTD.;LUMIENSE PHOTONICS INC. 发明人 HANNEBAUER ROBERT
分类号 H01L31/04;H01L31/032 主分类号 H01L31/04
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