发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
A nonvolatile semiconductor memory device includes: forming a stacked body by alternately stacking a plurality of interlayer insulating films and a plurality of control gate electrodes; forming a through-hole extending in a stacking direction in the stacked body; etching a portion of the interlayer insulating film facing the through-hole via the through-hole to remove the portion; forming a removed portion; forming a first insulating film on inner faces of the through-hole and the portion in which the interlayer insulating films are removed; forming a floating gate electrode in the portion in which the interlayer insulating films are removed; forming a second insulating film so as to cover a portion of the floating gate electrode facing the through-hole; and burying a semiconductor pillar in the through-hole.
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申请公布号 |
US2010181612(A1) |
申请公布日期 |
2010.07.22 |
申请号 |
US20090638480 |
申请日期 |
2009.12.15 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KITO MASARU;KIDOH MASARU;FUJIWARA TOMOKO;KOMORI YOSUKE;ISHIDUKI MEGUMI;TANAKA HIROYASU;FUKUZUMI YOSHIAKI;KATSUMATA RYOTA;KIRISAWA RYOUHEI;MATSUNAMI JUNYA;AOCHI HIDEAKI |
分类号 |
H01L29/788;H01L21/205;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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