METHOD AND SYSTEM FOR LOW TEMPERATURE ION IMPLANTATION

摘要

A method comprises pre-cooling a first semiconductor wafer outside of a process chamber, from a temperature at or above 15° C. to a temperature below 5° C. The pre-cooled first wafer is placed inside the process chamber after performing the pre-cooling step. A low-temperature ion implantation is performed on the first wafer after placing the first wafer.