| 摘要 |
A method for manufacturing a semiconductor device comprises forming a metal wiring on a semiconductor substrate, forming an insulating film over the semiconductor substrate with the metal wiring, forming a through hole in the insulating film, performing sputter-etching to enlarge an cross section of the through hole, and forming a stacked film. In forming the stacked film, there are formed a first titanium film, a titanium nitride film, and a second titanium film in this order over the insulating film including an inner surface of the through hole at a temperature within a range from 20 to 40° C., and a first Al layer, a second Al layer, and a third Al layer in this order over the second titanium film.
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