| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress deterioration of productivity and production cost in PCR and to achieve high flatness while eliminating influence of anisotropy in the peripheral part of a wafer, especially in the circumference direction thereof. Ž<P>SOLUTION: First, a plurality of wafers are directly or indirectly superposed with the periphery of each wafer aligned to form protective layers on both principal surfaces excluding peripheral parts in the wafers of the outermost layers of a laminate. An acid etching liquid is then brought into contact with the laminate to apply acid-etching only to the peripheral part of each wafer of the laminate. Protective films are then formed at least on the peripheral parts of the laminate. The protective layers existing on both principal surfaces of the outermost layers are then separated from the laminate formed with the protective films, and each wafer is separated with the protective films existing in the peripheral parts. An alkali etching liquid is then brought into contact with each wafer with the protective layers existing on the separated peripheral parts to apply alkali etching only to both sides of each wafer. Furthermore, the protective film existing in the peripheral part of each wafer after alkali etching is removed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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