发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device where a plurality of DMOS transistors formed in a distributed manner on a semiconductor substrate can operate without being destroyed and a method of manufacturing the same. The on/off threshold voltage of a DMOS transistor at the innermost position from among three or more DMOS transistors formed in a distributed manner on a semiconductor is greater than the on/off threshold voltage of a DMOS transistor at the outermost position.
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申请公布号 |
US2010181616(A1) |
申请公布日期 |
2010.07.22 |
申请号 |
US20100656137 |
申请日期 |
2010.01.19 |
申请人 |
OKI SEMICONDUCTOR CO., LTD. |
发明人 |
TAKEHIRO SHINOBU |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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