| 摘要 |
<p>The manufacturing yield of semiconductor devices (CMUT) is improved. Before a polyimide film, which serves as a protection film, is formed, a membrane is caused to vibrate repetitively, thereby evaluating the withstand voltage between upper and lower electrodes. The upper electrode of any faulty CMUT cell, in which degradation in the withstand voltage between the upper and lower electrodes occurs due to the repetitive vibration of the membrane, is removed in advance, thereby electrically disconnecting the faulty CMUT from the other normal CMUT cells. As a result, in a block (RB) or a channel (RCH) including the CMUT cells (RC) as repaired, the degradation in the withstand voltage between the upper and lower electrodes is prevented from occurring after the repetitive vibration of the membrane.</p> |
