| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing laminated wafers for preventing substrates from being damaged by a difference in thermal coefficients of expansion when bonding semiconductor substrates to handle substrates, and for preventing untransferred sections from occurring in semiconductor thin films to be transferred. SOLUTION: The method of manufacturing laminated wafers includes: a process for implanting ions from a surface 5 of a semiconductor substrate 1 to form an ion implantation layer 2; a process for performing surface activation treatment to at least one of the surface of a handle substrate 3 and the surface 5 of the semiconductor substrate 1 subjected to ion implantation; a process for bonding the surface 5 of the semiconductor substrate 1 to the surface of the handle substrate 3 at not less than 50°C and not more than 400°C; a process for heat-treating the laminated substrate at a highest temperature of not less than 200°C and not more than 400°C to obtain a joining element 6; and a process for emitting visible light from the side of the handle substrate of the joining element 6 or the side of the semiconductor substrate toward the ion implantation layer 2 of the semiconductor substrate for the embrittlement of the interface of the ion implantation layer 2, and for transferring the semiconductor thin film 4. COPYRIGHT: (C)2010,JPO&INPIT |
