发明名称 STRUCTURE WITH SELF ALIGNED RESIST LAYER ON AN INTERCONNECT SURFACE AND METHOD OF MAKING SAME
摘要 A structure is provided with a self-aligned resist layer on a surface of metal interconnects for use in forming air gaps in an insulator material and method of fabricating the same. The non-lithographic method includes applying a resist on a structure comprising at least one metal interconnect formed in an insulator material. The method further includes blanket-exposing the resist to energy and developing the resist to expose surfaces of the insulator material while protecting the metal interconnects. The method further includes forming air gaps in the insulator material by an etching process, while the metal interconnects remain protected by the resist.
申请公布号 US2010181678(A1) 申请公布日期 2010.07.22
申请号 US20090356105 申请日期 2009.01.20
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 EDELSTEIN DANIEL C.;HUANG ELBERT E.;MILLER ROBERT D.
分类号 H01L23/522;G03F7/20 主分类号 H01L23/522
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