| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device high in operability and reliability. SOLUTION: The semiconductor device is provided which includes a silicon oxide film formed on a silicon substrate, an active layer surrounded by a silicon oxide film which is obtained by heat-oxidizing a monocrystalline silicon substrate which is not yet formed as a monocrystalline island-like silicon layer constituted of a part of the monocrystalline silicon substrate and serving as the active layer of a TFT (Thin Film Transistor) and which has a film thickness defined by laminating on the silicon oxide film along a laminating interface and ranging from 0.05μm to 0.5μm, and a silicon oxide film formed on another surface by heat-oxidizing the active layer, and a gate electrode formed on the active layer, wherein the monocryatalline island-like silicon layer is obtained by parting the monocrystalline silicon substrate into which hydrogen is introduced via the silicon oxide film of the film thickness ranging from 0.05μm to 0.5μm along a hydrogen-introduced part. COPYRIGHT: (C)2010,JPO&INPIT |
