| 发明名称 |
GROUP III NITRIDE SUBSTRATE, SEMICONDUCTOR DEVICE COMPRISING THE SAME, AND METHOD FOR PRODUCING SURFACE-TREATED GROUP III NITRIDE SUBSTRATE |
| 摘要 |
<p>Disclosed is a group III nitride substrate which has a surface layer containing 3-25 at% of carbon and from 5 × 1010 to 200 × 1010 atoms/cm2 of a p-type metal element. The group III nitride substrate has a stable surface.</p> |
| 申请公布号 |
WO2010082351(A1) |
申请公布日期 |
2010.07.22 |
| 申请号 |
WO2009JP50657 |
申请日期 |
2009.01.19 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;ISHIBASHI, KEIJI |
发明人 |
ISHIBASHI, KEIJI |
| 分类号 |
C30B29/38 |
主分类号 |
C30B29/38 |
| 代理机构 |
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代理人 |
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| 主权项 |
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