MULTILEVEL ONE-TIME PROGRAMMABLE MEMORY DEVICE

摘要

PURPOSE: A multi level one-time programmable memory device is provided to make a plurality of fuse lines with different resistance elements by differently forming a valid line length between a first electrode and a second electrode. CONSTITUTION: A first electrode(820) is formed on a first insulation layer(IS1). A second electrode(840) is formed on a substrate(810). A plurality of fuse lines(FL1,FL2,FL3) is connected between the first electrode and the second electrode. The fuse line performs a fusing operation by corresponding to the voltage difference between the first voltage and the second voltage. The plurality of fuse lines has different resistance elements.