| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress formation of an Sn-rich AuSn compound on an interface when an Au bump electrode and a wiring pattern are joined together using Sn solder. <P>SOLUTION: A method of manufacturing a semiconductor device includes the steps of: sticking a layer consisting essentially of tin onto a surface of a gold bump electrode 31A formed on a semiconductor chip 31; forming a layer 31Ab of a gold-tin compound containing gold more than tin in terms of atomic ratio on the surface of the gold bump electrode to a uniform thickness within a range of 3 to 10 μm by making the surface of the gold bump electrode react with the layer consisting essentially of tin; arranging the semiconductor chip on a circuit board 21 such that the gold bump electrode having the layer of the gold-tin compound formed on the surface comes into contact with a wiring pattern 21A on the circuit board via a solder layer 21a consisting essentially of tin; and mounting the semiconductor chip on the circuit board in a flip-chip manner by fusing the solder layer to join the gold bump electrode to the wiring pattern. <P>COPYRIGHT: (C)2010,JPO&INPIT |
