| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a large-sized semiconductor device which works at high speed. <P>SOLUTION: A top-gate-type transistor including a single-crystal semiconductor layer and a bottom-gate-type transistor including a semiconductor layer of amorphous silicon (or micro-crystal silicon) are formed on the same substrate. Gate electrodes of the respective transistors are formed on the same layer, and source and drain electrodes are also formed on the same layer. Thus, a manufacturing process is reduced. That is, only by adding a small quantity of steps to the manufacturing process of the bottom-gate-type transistor, two types of transistors can be manufactured. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
