| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device suppressing formation of an insulating oxide film on the surface of a lower electrode. Ž<P>SOLUTION: This semiconductor device includes a substrate 100, an insulating film 210 formed on the substrate 100, and a capacitance element 300. The capacitance element 300 includes cylindrical lower electrodes 310 formed on the insulating film 210, a dielectric film 320, and an upper electrode 330. The dielectric film 320 is formed on each of the bottom face, the inside face, and the outside face of the lower electrodes 310. That is, each of the bottom face, the inside face, and the outside face of the lower electrodes 310 contributes to the increase of a capacitance. In each of the bottom face, the inside face, and the outside face of the lower electrodes 310, nitrogen concentration increases toward the surface from the inside thereof. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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