发明名称 |
PATTERN CORRECTION METHOD, EXPOSURE MASK, MANUFACTURING METHOD OF EXPOSURE MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A pattern correction method includes: a correction step of performing pattern correction on a semiconductor circuit pattern having plural transistors as component elements; an order of priority recognition step of recognizing an order of priority set with respect to the plural transistors prior to the pattern correction at the correction step; and a condition adjustment step of adjusting correction conditions for the pattern correction with reference to the transistor having a high priority recognized at the order of priority recognition step in the pattern correction at the correction step.
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申请公布号 |
US2010183960(A1) |
申请公布日期 |
2010.07.22 |
申请号 |
US20100688039 |
申请日期 |
2010.01.15 |
申请人 |
SONY CORPORATION |
发明人 |
OKA MIKIO;KOIKE KAORU;TSUCHIYA KENSUKE;OHNUMA HIDETOSHI |
分类号 |
G03F1/36;G03F1/68;G03F7/20;H01L21/027 |
主分类号 |
G03F1/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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