| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of obtaining gettering effects and increasing the transverse rupture strength of a chip without distorting the periphery of an individual chip where the semiconductor is formed. <P>SOLUTION: By forming a modification region P inside a wafer W at a part other than a dicing street S and near the semiconductor element E inside the semiconductor device D, gettering effect is obtained and the traverse rupture strength of the chip C is improved, without imparting distortions to the periphery of the individual chip C, where the semiconductor device D is formed. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
