发明名称 |
METHOD OF FORMING A FIELD EFFECT TRANSISTOR |
摘要 |
A method of forming a field effect transistor comprises providing a substrate comprising a biaxially strained layer of a semiconductor material. A gate electrode is formed on the biaxially strained layer of semiconductor material. A raised source region and a raised drain region are formed adjacent the gate electrode. Ions of a dopant material are implanted into the raised source region and the raised drain region to form an extended source region and an extended drain region. Moreover, in methods of forming a field effect transistor according to embodiments of the present invention, a gate electrode can be formed in a recess of a layer of semiconductor material. Thus, a field effect transistor wherein a source side channel contact region and a drain side channel contact region located adjacent a channel region are subject to biaxial strain can be obtained.
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申请公布号 |
US2010181619(A1) |
申请公布日期 |
2010.07.22 |
申请号 |
US20100752487 |
申请日期 |
2010.04.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WEI ANDY;KAMMLER THORSTEN;HOENTSCHEL JAN;HORSTMANN MANFRED |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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