| 摘要 |
A coating composition for forming an oxide film, which can suppress the phenomenon of an increased wet etching rate caused by a part of the SOG film embedded inside a groove becoming low-density, and which can suppress the volume expansion coefficient to a low level, and a method for producing a semiconductor device using the same are provided. An oxide film is formed inside a groove by: coating a coating composition for forming an oxide film, which contains a polysilazane or a hydrogenated silsesquioxane, and a polysilane, on a substrate having a groove; and thereafter heat treatment in an oxidizing atmosphere. This method is suitable for forming a device isolation region and a wiring interlayer dielectric film.
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