| 摘要 |
Methods of erasing a memory, methods of operating a memory, memory devices, and systems are disclosed, for example. In one such method, an erase block is erased to an intermediate erase voltage before it is erased to a final erase voltage, such as to tighten an erase distribution. Faster erasing cells have their erasing throttled using a positive bias on their access line once a particular number of cells coupled to the access line are erased to the intermediate erase voltage. |
