| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor containing, as a main component, a composition component expressed by Al<SB>x</SB>Ga<SB>1-x-y</SB>In<SB>y</SB>N (where x and y satisfy 0≤x, y, 1-x-y≤1) and oriented in a direction except for the c-axis to inhibit generation of a built-in electric field, for example, in a crystal direction having inversion symmetry. <P>SOLUTION: The semiconductor is oriented in a direction inclined by at least 8° from the c-axis, and contains, as a main component, a composition component expressed by Al<SB>x</SB>Ga<SB>1-x-y</SB>In<SB>y</SB>N (where x and y satisfy 0≤x, y, 1-x-y≤1) and contains B by less than 1 atom%. <P>COPYRIGHT: (C)2010,JPO&INPIT |
