| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means for reducing connection defects between semiconductor chips in a semiconductor device which has the plurality of semiconductor chips stacked on a substrate. <P>SOLUTION: The semiconductor device includes: the semiconductor chip 2; the semiconductor chip 3a stacked on the substrate 4 together with the semiconductor chip 2, and having a plane area larger than the semiconductor chip 2; a through electrode 22 extending through the semiconductor chip 2 only in a central portion of the semiconductor chip 2; a through electrode 32 extending through the semiconductor chip 3a at a position facing the through electrode 22; and a conduction bump 7b provided between the through electrode 22 and the through electrode 32, and conductively connecting the through electrode 22 with the through electrode 32. <P>COPYRIGHT: (C)2010,JPO&INPIT |
