EPITAXIALLY COATED SILICON WAFER AND METHOD FOR PRODUCING EPITAXIALLY COATED SILICON WAFER

摘要

PURPOSE: An epitaxial coating silicon wafer with an improved plane figure and a method for manufacturing the same are provided to manufacture a silicon wafer with the overall plane figure of 0.02 to 0.06 um. CONSTITUTION: A plurality of wafers whose surface is polished is prepared. A plurality of wafers is successively coated in an epitaxial reactor. The plurality of wafers is arranged in a susceptor inside the epitaxial reactor one by one. The plurality of wafers is pre-processed under the hydrogen atmosphere. The surface of the polished wafer is epitaxially coated.