发明名称 Method for manufacturing a photomask, and dry etching method
摘要 A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/Cl ratio for selectively etching away the silicon base material layer of the light-shielding film.
申请公布号 EP2209048(A2) 申请公布日期 2010.07.21
申请号 EP20100000280 申请日期 2010.01.13
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 IGARASHI, SHINICHI;KANEKO, HIDEO;INAZUKI, YUKIO;NISHIKAWA, KAZUHIRO
分类号 G03F1/80;G03F1/00;G03F1/32 主分类号 G03F1/80
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