| 摘要 |
Memory devices adapted to process and generate analog data signals representative of data values of two or more bits of information facilitate increases in data transfer rates relative to devices processing and generating only binary data signals indicative of individual bits. Programming of such memory devices includes programming to a target threshold voltage range representative of the desired bit pattern. Reading such memory devices includes generating an analog data signal indicative of a threshold voltage of a target memory cell. This analog signal may then be processed to convert it to a digital representation of the individual bits of the bit pattern represented by the analog signal. Such memory devices may be incorporated into bulk storage devices, and may utilize form factors and communication protocols of hard disk drives (HDDs) and other traditional bulk storage devices for transparent replacement of such traditional bulk storage devices in electronic systems. |
