PURPOSE: A light emitting device is provided to improve light transmittance and light output by forming a mesh type transparent electrode. CONSTITUTION: An N type semiconductor layer(120) is formed on a sapphire substrate(110). An active layer(130) is formed on the N type semiconductor layer. A P-type semiconductor layer(140) is formed on the active layer. A mesh type transparent electrode(150) is formed on the P type semiconductor layer. A P type electrode(170) is formed on the mesh type transparent electrode.
